jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. unit: w the eight circuits share the gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. input output gnd 10.5k 10k package type 18p4g(p) 20p2n-a(fp) package type 20p2e-a(kp) in7 ? 7 12 in5 ? 5 14 input output in4 ? 4 15 in3 ? 3 in2 ? 2 17 1 in1 ? 18 in6 ? 613 ? o1 ? o2 ? o3 ? o4 ? o5 ? o6 ? o7 16 in8 ? 8 11 gnd 9 ? o8 10 ? nc in7 ? 8 13 in5 ? 6 15 input output in4 ? 5 16 in3 ? 4 in2 ? in1 ? in6 ? 7 14 3 18 ? o1 ? o2 ? o3 ? o4 ? o5 ? o6 ? o7 17 in8 ? 9 12 gnd 10 ? o8 11 2 19 1 20 nc nc ? nc nc : no connection mitsubishi semiconductor M63807P/fp/kp 8-unit 300ma transistor array pin configuration description M63807P/fp/kp are eight-circuit single transistor arrays. the circuits are made of npn transistors. both the semicon- ductor integrated circuits perform high-current driving with extremely low input-current supply. features l three package configurations (p, fp, and kp) l medium breakdown voltage (bv ceo 3 35v) l synchronizing current (i c(max) = 300ma) l low output saturation voltage l wide operating temperature range (ta = C40 to +85 c) application driving of digit drives of indication elements (leds and lamps) with small signals function the M63807P/fp/kp each have eight circuits consisting of npn transistor. the transistor emitters are all connected to the gnd pin. the transistors allow synchronous flow of 300ma collector current. a maximum of 35v voltage can be applied between the collector and emitter. circuit diagram
jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. M63807P m63807fp m63807kp mitsubishi semiconductor M63807P/fp/kp 8-unit 300ma transistor array duty cycle no more than 50% duty cycle no more than 100% duty cycle no more than 30% duty cycle no more than 100% duty cycle no more than 12% duty cycle no more than 100% recommended operating conditions (unless otherwise noted, ta = C40 ~ +85 c) v (br) ceo v in(on) h fe v v 35 7.5 50 11.0 0.2 0.8 15.0 symbol unit parameter test conditions limits min typ max v collector-emitter breakdown voltage on input voltage dc amplification factor i ceo = 10 m a i in = 1ma, i c = 10ma i in = 2ma, i c = 150ma i in = 1ma, i c = 10ma v ce = 10v, i c = 10ma v ce(sat) collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = 25 c) v o v 0 0 0 0 0 0 0 0 35 250 170 250 130 250 100 30 symbol unit parameter test conditions limits min typ max output voltage ma v i c v in input voltage collector current (current per 1 cir- cuit when 8 circuits are coming on si- multaneously) M63807P m63807fp m63807kp ns ns 120 240 symbol unit parameter test conditions limits min typ max turn-on time turn-off time t on t off c l = 15pf (note 1) switching characteristics (unless otherwise noted, ta = 25 c) collector-emitter voltage collector current input voltage power dissipation operating temperature storage temperature v ma v w c c C0.5 ~ +35 300 C0.5 ~ +35 1.79 1.10 0.68 C40 ~ +85 C55 ~ +125 ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = C40 ~ +85 c) output, h current per circuit output, l v ceo i c v i p d t opr t stg ta = 25 c, when mounted on board
jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. ton toff 50% 50% 50% 50% input output (1)pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, zo = 50 w , v ih = 11v (2)input-output conditions : r l = 220 w , vo = 35v (3)electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes pg 50 w r l output input vo c l measured device mitsubishi semiconductor M63807P/fp/kp 8-unit 300ma transistor array typical characteristics timing diagram note 1 test circuit thermal derating factor characteristics ambient temperature ta ( c) power dissipation pd (w) input characteristics input voltage v i (v) input current i i (ma) duty cycle-collector characteristics (M63807P) duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (M63807P) duty cycle (%) collector current ic (ma) 2.0 1.5 1.0 0.5 0 0 25 50 75 100 85 0 100 20 40 60 80 400 300 200 100 0 400 300 200 100 0 0 100 20 40 60 80 0.931 0.572 0.354 4 3 2 1 0 030 25 20 15 10 5 M63807P m63807fp m63807kp ta = 25 c ta = ?0 c ta = 85 c ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value the circle represents the value of the simultaneously-operated circuit. ?a = 25 c ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value the circle represents the value of the simultaneously-operated circuit. ?a = 85 c ? ? ? ~ ? ~ a ? ? ? ? ?
jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. duty cycle-collector characteristics (m63807fp) duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (m63807fp) duty cycle-collector characteristics (m63807kp) duty cycle (%) collector current ic (ma) 400 300 200 100 0 0 100 20 40 60 80 400 300 200 100 0 0 100 20 40 60 80 output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) 250 200 150 100 50 0 0 0.2 0.4 0.6 0.8 100 80 60 40 20 0 0 0.05 0.10 0.15 0.20 duty cycle-collector characteristics (m63807kp) duty cycle (%) collector current ic (ma) duty cycle (%) collector current ic (ma) 400 300 200 100 0 0 100 20 40 60 80 400 300 200 100 0 0 100 20 40 60 80 ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value the circle represents the value of the simultaneously-operated circuit. ?a = 25 c ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value the circle represents the value of the simultaneously-operated circuit. ?a = 85 c ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value the circle represents the value of the simultaneously-operated circuit. ?a = 25 c ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value the circle represents the value of the simultaneously-operated circuit. ?a = 85 c ta = 25 c i b = 3ma i b = 2ma i b = 1.5ma i b = 1ma i b = 0.5ma ta = 25 c v i = 28v v i = 24v v i = 20v v i = 8v v i = 12v v i = 16v ~ a ? ? ? ? ? a ? ? ? ? ? ~ ? ? ? ? ? a a ? ? ? ? ? mitsubishi semiconductor M63807P/fp/kp 8-unit 300ma transistor array
jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor M63807P/fp/kp 8-unit 300ma transistor array grounded emitter transfer characteristics input voltage v i (v) collector current ic (ma) grounded emitter transfer characteristics input voltage v i (v) collector current ic (ma) 50 40 30 20 10 0 250 200 150 100 50 0 output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) dc amplification factor collector current characteristics collector current ic (ma) dc amplification factor h fe 100 80 60 40 20 0 0 0.05 0.10 0.15 0.20 10 0 10 1 10 2 10 1 10 2 10 3 23 57 23 57 2 3 5 7 2 3 5 7 10 3 23 57 048121620 i i = 2ma ta = ?0 c ta = 25 c ta = 85 c ta = 25 c v ce 10v 0 1.0 2.0 3.0 4.0 5.0 v ce = 4v ta = 85 c ta = ?0 c ta = 25 c v ce = 4v ta = 85 c ta = 25 c ta = ?0 c
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